POLYCRYSTALLINE OXIDE THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR
申请公布号:WO2016074427(A1)
申请号:WO2015CN76263
申请日期:2015.04.10
申请公布日期:2016.05.19
发明人:HU, HEHE
分类号:H01L21/77;H01L27/12;H01L29/10;H01L29/786
主分类号:H01L21/77
摘要:A polycrystalline oxide thin-film transistor array substrate and a preparation method therefor. A polycrystalline oxide thin-film layer of the polycrystalline oxide thin-film transistor array substrate is formed by a two-step method, the problem in the prior art that ultrahigh temperature annealing is needed is overcome, and the preparation of the polycrystalline oxide thin-film transistor array substrate on an existing manufacturing device of an amorphous oxide thin-film transistor array substrate is realized, without the need to add special devices and special operations, thereby being easy to implement; and at the same time, high temperature annealing is not needed, thereby reducing the energy consumption.
Neue Polypeptide, deren kodierende DNS
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