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Semiconductor device for use in an ignition system of an internal combustion engine

申请公布号:US9337625(B2)

申请号:US201514622319

申请日期:2015.02.13

申请公布日期:2016.05.10

申请人:
FUJI ELECTRIC CO., LTD.

发明人:Miyazawa Shigemi

分类号:F02P3/055;H01T15/00;H03K17/042;H01T1/15;F02P3/04

主分类号:F02P3/055

代理机构:
Rabin & Berdo, P.C.

代理人:Rabin & Berdo, P.C.

地址:Kawasaki-shi JP

摘要:A semiconductor device includes a power semiconductor element, a gate pull-down circuit which is connected to a gate terminal of the power semiconductor element, and a gate resistor which is connected between an input terminal of the semiconductor device and the gate terminal of the power semiconductor element. The gate pull-down circuit has a constant current circuit by which electric charges can be extracted from a gate capacitance of the power semiconductor element when a signal inputted to the input terminal has a low level. As a result, the semiconductor device has an improved switching speed and an improved noise resistance.

主权项:1. A semiconductor device, comprising: a power semiconductor element; a gate pull-down circuit which is connected to a gate terminal of the power semiconductor element; and a gate resistor which is connected between an input terminal of the semiconductor device and the gate terminal of the power semiconductor element, wherein the gate pull-down circuit includes a constant current circuit by which electric charges can be extracted from a gate capacitance of the power semiconductor element when a signal inputted to the input terminal is at a low level.

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