INTEGRATED POWER DEVICE WITH A METAL OXYNITRIDE ACTIVE CHANNEL FOR POWER SWITCHING AND MICROWAVE AMPLIFICATION
申请公布号:US2016099684(A1)
申请号:US201414121664
申请日期:2014.10.06
申请公布日期:2016.04.07
发明人:Qiu Cindy X.;Shih Andy;Shih Yi-Chi;Han Lu;Qiu Chunong;Shih Ishiang
分类号:H03F1/02;H03K3/012;H03F3/195;H01L29/20;H03F3/213
主分类号:H03F1/02
地址:Brossard CA
摘要:One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.
主权项:1. An integrated intelligent power electronic circuit chip having at least one power transistor with a low temperature metal oxynitride first active channel layer for switching of power from a power source to an external load, comprising a logic and control circuit chip, a first chip passivation layer having a first chip passivation layer thickness, a first gate layer having a first gate layer thickness, a first gate insulating layer having a first gate insulating layer thickness and a first gate insulating layer fixed charge type, a first active channel layer having a first active channel layer thickness and a first active channel layer energy gap, a drain, a source and a first surface passivation layer having a first surface passivation layer thickness, said power transistor is electrically connected to said logic and control circuit chip through via holes and receives control signal from said logic and control circuit chip.
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