PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,申请号US201414572908-传众专利搜索

PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

申请公布号：US2016020099(A1)

申请号：US201414572908

申请日期：2014.12.17

申请公布日期：2016.01.21

申请人：

Kabushiki Kaisha Toshiba

发明人：SEGAWA Kazuhiro;KOMINE Nobuhiro;MATSUNAGA Kentaro;KONDOH Takehiro;NAKAGAWA Shinichi

分类号：H01L21/033;H01L21/3213;H01L29/40;H01L29/423

主分类号：H01L21/033

地址：Minato-ku JP

摘要：According to one embodiment, first, an embedment material is embedded between linear core material patterns in such a manner that a height thereof becomes lower than a height of each of the core material patterns. Then, a shrink agent is supplied and solidified on the embedment material. Subsequently, the solidified shrink agent and the embedment material are removed and a spacer film is formed on an object of processing. Then, the spacer film is etched-back and a spacer pattern is formed by removal of the core material patterns. The solidified shrink agent which is formed in such a manner that a width of the spacer pattern becomes narrow in a region corresponding to a position where the shrink agent, in a sectional surface vertical to an extended direction of the spacer pattern is supplied is removed.

主权项：1. A pattern forming method comprising: forming linear core material patterns arranged vertically to an extended direction at predetermined intervals above an object of processing; embedding an embedment material between the core material patterns in such a manner that a height thereof becomes lower than a height of each of the core material patterns; supplying a shrink agent on the embedment material between the core material patterns; heating the shrink agent to solidify the shrink agent; removing at least a part of the solidified shrink agent and the embedment material; forming a spacer film above the object of processing above which the core material patterns are formed; etching-back the spacer film in such a manner that upper surfaces of the core material patterns are exposed; and forming a spacer pattern including the spacer film by removing the core material patterns, wherein in the removal of the solidified shrink agent and the embedment material, the solidified shrink agent which is formed in such a manner that a width of the spacer pattern becomes narrow in a region corresponding to a position where the shrink agent is supplied, in a sectional surface vertical to an extended direction of the spacer pattern is removed.