PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURRENCE OF VOIDS,申请号US201414555379-传众专利搜索

PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURRENCE OF VOIDS

申请公布号：US2016020094(A1)

申请号：US201414555379

申请日期：2014.11.26

申请公布日期：2016.01.21

申请人：

ASM IP Holding B.V.

发明人：Van Aerde Steven R.A.;van der Jeugd Cornelius A.;Oosterlaken Theodorus G.M.

分类号：H01L21/02

主分类号：H01L21/02

地址：Almere NL

摘要：In some embodiments, silicon-filled openings are formed having no or a low occurrence of voids in the silicon fill, while maintaining a smooth exposed silicon surface. In some embodiments, an opening in a substrate may be filled with silicon, such as amorphous silicon. The deposited silicon may have interior voids. This deposited silicon is then exposed to a silicon mobility inhibitor, such as an oxygen-containing species and/or a semiconductor dopant. The deposited silicon fill is subsequently annealed. After the anneal, the voids may be reduced in size and, in some embodiments, this reduction in size may occur to such an extent that the voids are eliminated.

主权项：1. A method for semiconductor processing, comprising: depositing an amorphous silicon film onto a substrate at a deposition temperature in a deposition chamber, the substrate having a trench and the amorphous silicon film having a thickness sufficient to fill the trench; exposing the amorphous silicon film to an oxidizing gas, a nitriding gas, or an n-type dopant gas at a temperature of about 575° C. or below; subsequently heating the substrate to an anneal temperature; and maintaining the substrate at the anneal temperature to crystallize the amorphous silicon film in the trench.