SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF,申请号JP20110096404-传众专利搜索

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

申请公布号：JP2012227490(A)

申请号：JP20110096404

申请日期：2011.04.22

申请公布日期：2012.11.15

申请人：

TOYOTA CENTRAL R&D LABS INC;HASEGAWA FUMIO

发明人：KAJI TORU;HASEGAWA FUMIO

分类号：H01L21/338;H01L21/20;H01L21/265;H01L21/336;H01L29/778;H01L29/78;H01L29/786;H01L29/812

主分类号：H01L21/338

摘要：<P>PROBLEM TO BE SOLVED: To provide a technique for introducing negative ions into a vicinity of a hetero-junction surface while suppressing a damage by etching. <P>SOLUTION: A manufacturing method of a semiconductor device comprises a protective film formation step of forming a protective film 30 on an introduction region 8 and a plasma step of exposing the introduction region 8 into a plasma containing negative ions after the protective film formation step. The protective film 30 has a lower etching rate for the plasma than the introduction region 8. A material through which the negative ions can pass is used as the protective film 30. The negative ions in the plasma pass through the protective film 30 and are introduced into the introduction region 8. <P>COPYRIGHT: (C)2013,JPO&INPIT