METHOD FOR FORMING FLUOROPHOR THIN FILM

申请公布号：JP2012224659(A)

申请号：JP20110090767

申请日期：2011.04.15

申请公布日期：2012.11.15

申请人：

NIPPON TELEGR & TELEPH CORP <NTT>

发明人：AKAZAWA MASAYOSHI;SHINOJIMA HIROYUKI

分类号：C09K11/08;C01G9/00;C09K11/00;C09K11/54;C23C14/34

主分类号：C09K11/08

摘要：<P>PROBLEM TO BE SOLVED: To obtain a state that sufficient hydrogen is present in a ZnO:Eu film whose Eu is optically activated. <P>SOLUTION: In the first process S101, a thin film 102 comprising ZnO doped with Eu is formed on a substrate 101. Subsequently, in the second process S102, an atmosphere in which hydrogen is present is heated to activate Eu of the thin film 102 in a state containing hydrogen in the thin film 102. For example, in the first process, the thin film 102 may be formed by a spatter method for introducing H<SB POS="POST">2</SB>O gas. In this case, an electron cyclotron resonance spatter method using a target comprising ZnO containing Eu may be used. <P>COPYRIGHT: (C)2013,JPO&INPIT

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