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SEMICONDUCTOR DEVICE HAVING VERTICAL AND HORIZONTAL TYPE GATES AND METHOD FOR FABRICATING THE SAME

申请公布号:KR20090046147(A)

申请号:KR20070112124

申请日期:2007.11.05

申请公布日期:2009.05.11

申请人:
DONGBU HITEK CO., LTD.

发明人:PANG, SUNG MAN

分类号:H01L29/78

主分类号:H01L29/78

摘要:A semiconductor device having both vertical and horizontal type gates and a method for fabricating the same for obtaining high integration of the semiconductor device and integration with other devices while also maximizing the breakdown voltage and operational speed and preventing damage to the semiconductor device.

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