Leakage reduction structures for nanowire transistors,申请号GB20150014059-传众专利搜索

Leakage reduction structures for nanowire transistors

申请公布号：GB2526463(A)

申请号：GB20150014059

申请日期：2013.03.14

申请公布日期：2015.11.25

申请人：

INTEL CORPORATION

发明人：SEIYON KIM;KELIN J KUHN;RAFAEL RIOS;MARK ARMSTRONG

分类号：H01L29/78

主分类号：H01L29/78

摘要：<p>A nanowire device of the present description may include a highly doped underlayer formed between at least one nanowire transistor and the microelectronic substrate on which the nanowire transistors are formed, wherein the highly doped underlayer may reduce or substantially eliminate leakage and high gate capacitance which can occur at a bottom portion of a gate structure of the nanowire transistors. As the formation of the highly doped underlayer may result in gate inducted drain leakage at an interface between source structures and drain structures of the nanowire transistors, a thin layer of undoped or low doped material may be formed between the highly doped underlayer and the nanowire transistors.</p>