AVALANCHE PHOTODIODE SEMICONDUCTOR STRUCTURE HAVING A HIGH SIGNAL-TO-NOISE RATIO AND METHOD FOR MANUFACTURING SUCH A PHOTODIODE,申请号EP20130814991-传众专利搜索

AVALANCHE PHOTODIODE SEMICONDUCTOR STRUCTURE HAVING A HIGH SIGNAL-TO-NOISE RATIO AND METHOD FOR MANUFACTURING SUCH A PHOTODIODE

申请公布号：EP2939275(A2)

申请号：EP20130814991

申请日期：2013.12.27

申请公布日期：2015.11.04

申请人：

COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES

发明人：ROTHMAN, JOHAN

分类号：H01L31/107;H01L31/18

主分类号：H01L31/107

摘要：A semiconductor structure, and method for manufacturing, of avalanche photodiode type for receiving electromagnetic radiation in a given wavelength range and including a first semiconductor area configured for absorption of the electromagnetic radiation, a second area configured for providing a multiplication of carriers, and a third semiconductor area in contact with the second semiconductor area. The second area includes at least two subparts with the second subpart configured to have a mean carrier multiplication rate that is more substantial than that of the first subpart.