SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, AND DISPLAY DEVICE

申请公布号：US2011024764(A1)

申请号：US20080921666

申请日期：2008.10.31

申请公布日期：2011.02.03

申请人：

KIMURA TOMOHIRO

发明人：KIMURA TOMOHIRO

分类号：H01L29/04;H01L21/336;H01L27/12

主分类号：H01L29/04

摘要：The present invention provides a semiconductor device which can reduce Ion defects due to reduction in an on-current. A semiconductor device of the present invention comprises: a substrate; a thin film transistor including a crystalline semiconductor layer which has a channel region and a source/drain region; and a wiring connected to the source/drain region. The thin film transistor and the wiring are disposed on the substrate. The crystalline semiconductor layer further has a low-impurity-concentration region which has a lower impurity concentration than that of the source/drain region and a contacting portion contacting with the wiring. The low-impurity-concentration region is disposed adjacent to the source/drain region except a region on a channel-region side of the source/drain region.

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