FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIVITY TYPE REGIONS,申请号US201314028043-传众专利搜索

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIVITY TYPE REGIONS

申请公布号：US2014015021(A1)

申请号：US201314028043

申请日期：2013.09.16

申请公布日期：2014.01.16

申请人：

CHANG PETER L. D.;AVCI UYGAR E.;KENCKE DAVID;BAN IBRAHIM

发明人：CHANG PETER L. D.;AVCI UYGAR E.;KENCKE DAVID;BAN IBRAHIM

分类号：H01L29/78;H01L29/66

主分类号：H01L29/78

摘要：A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.