半導体装置の作製方法,申请号JP20110031654-传众专利搜索

半導体装置の作製方法

申请公布号：JP5779362(B2)

申请号：JP20110031654

申请日期：2011.02.17

申请公布日期：2015.09.16

分类号：H01L29/786;G02F1/1368;G09F9/30

主分类号：H01L29/786

摘要：<p>The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.</p>