RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS,申请号EP20110787006-传众专利搜索

RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS

申请公布号：EP2577731(A4)

申请号：EP20110787006

申请日期：2011.05.09

申请公布日期：2015.05.27

申请人：

MICRON TECHNOLOGY, INC.

发明人：MARSH, EUGENE, P.;QUICK, TIMOTHY, A.

分类号：H01L27/105;H01L21/8247

主分类号：H01L27/105

摘要：<p>Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.</p>