INTEGRATED CIRCUIT STRUCTURE TO RESOLVE DEEP-WELL PLASMA CHARGING PROBLEM AND METHOD OF FORMING THE SAME,申请号US201514594259-传众专利搜索

INTEGRATED CIRCUIT STRUCTURE TO RESOLVE DEEP-WELL PLASMA CHARGING PROBLEM AND METHOD OF FORMING THE SAME

申请公布号：US2015140748(A1)

申请号：US201514594259

申请日期：2015.01.12

申请公布日期：2015.05.21

申请人：

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人：YEN David;LIN Sung-Chieh;HSU Kuoyuan (Peter)

分类号：H01L21/8238;H01L29/66;H01L21/263

主分类号：H01L21/8238

地址：Hsinchu TW

摘要：A method for forming an integrated circuit includes forming a deep n-well (DNW) in a substrate, and forming a PMOS transistor in the DNW. The method also includes forming an NMOS transistor in the substrate and outside the DNW, and forming a reverse-biased diode. The method further includes forming an electrical path between a drain of the PMOS transistor and a gate structure of the NMOS transistor. The dissipation device is also connected to the electrical path.

主权项：1. A method for forming an integrated circuit structure, the method comprising: forming a deep n-well (DNW) in a substrate; forming a PMOS transistor in the DNW; forming an NMOS transistor in the substrate and outside the DNW; forming a reverse-biased diode; and forming an electrical path between a drain of the PMOS transistor and a gate structure of the NMOS transistor, wherein the dissipation device is also connected to the electrical path.