Memory and method of operating the same,申请号US201213680547-传众专利搜索

Memory and method of operating the same

申请公布号：US9019740(B2)

申请号：US201213680547

申请日期：2012.11.19

申请公布日期：2015.04.28

申请人：

Shanghai Huahong Grace Semiconductor Manufacturing Corporation

发明人：Jiang Hong;Xu Yi;Xiao Jun;Kong Weiran;Li Binghan

分类号：G11C5/06;G11C7/18;H01L27/115;G11C7/00;G11C16/04;H01L21/28

主分类号：G11C5/06

代理机构：

Harness, Dickey & Pierce, P.L.C.

代理人：Harness, Dickey & Pierce, P.L.C.

地址：Shanghai CN

摘要：A memory includes an array of memory cells including a plurality of memory cells with a common source, wherein each of the plurality of memory cells with a common source includes two sub-memory cells, each of the sub-memory cells corresponds to a bit line, and the respective bits are electrically independent. Each of the sub-memory cells in the memory according to the disclosure corresponds to a bit line, and the respective bit lines are electrically independent, thereby effectively avoiding interference to other memory cells which will not be programmed during a program operation.

主权项：1. A memory, comprising an array of memory cells including a plurality of memory cells with a common source, wherein each of the plurality of memory cells with a common source includes two sub-memory cells, each of the sub-memory cells corresponds to a bit line, and the respective bit lines are electrically independent, and wherein each sub-memory cell comprises a diffusion area, and two adjacent sub-memory cells of two adjacent memory cells in the direction of a column of the array of memory cells share a diffusion area and a bit line.