METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE,申请号WO2014CN00838-传众专利搜索

METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

申请公布号：WO2015035736(A1)

申请号：WO2014CN00838

申请日期：2014.09.12

申请公布日期：2015.03.19

申请人：

SHINEON (BEIJING) TECHNOLOGY CO., LTD;ZHU, HAO;FAN, ZHENCAN;LIU, GUOXU

发明人：ZHU, HAO;FAN, ZHENCAN;LIU, GUOXU

分类号：H01L33/00;H01L33/20

主分类号：H01L33/00

摘要：<p>A method for manufacturing a semiconductor light emitting device. The process parameters of etching are changed to enable the angle of inclination of the side wall of an epitaxial layer resulting from etching to be within a range from 60 degrees to 90 degrees, indicating that the side wall is approximately perpendicular, therefore, the phenomenon of chip cracking during production is avoided and the yield rate is improved.</p>