PERPENDICULAR MAGNETIZATION WITH OXIDE INTERFACE
申请公布号:US2014363569(A1)
申请号:US201313933280
申请日期:2013.07.02
申请公布日期:2014.12.11
发明人:Hu Guohan;Worledge Daniel
分类号:G11B5/84
主分类号:G11B5/84
地址:Armonk NY US
摘要:A mechanism is provided for a structure with perpendicular magnetic anisotropy. A bottom oxide layer is disposed, and a magnetic layer is disposed adjacent to the bottom oxide layer. The magnetic layer includes iron and is magnetized perpendicularly to a plane of the magnetic layer. A top oxide layer is disposed adjacent to the magnetic layer.
主权项:1. A method of forming a structure with perpendicular magnetic anisotropy, comprising: depositing a bottom oxide layer; depositing a magnetic layer on top of the bottom oxide layer, wherein the magnetic layer includes iron and is magnetized perpendicularly to a longitudinal plane of the magnetic layer; and depositing a top oxide layer on top of the magnetic layer.
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