MULTI-EPITAXIAL STRUCTURE OF DOUBLE-INJECTION HIGH-VOLTAGE HYPER-FAST RECOVERY DIODE CHIP BASED ON GALLIUM AND ARSENIC,申请号RU20110136396-传众专利搜索

MULTI-EPITAXIAL STRUCTURE OF DOUBLE-INJECTION HIGH-VOLTAGE HYPER-FAST RECOVERY DIODE CHIP BASED ON GALLIUM AND ARSENIC

申请公布号：RU2531551(C2)

申请号：RU20110136396

申请日期：2011.09.02

申请公布日期：2014.10.20

申请人：

OBSHCHESTVO S OGRANICHENNOJ OTVETSTVENNOST'JU "INTELSOB" (OOO "INTELSOB")

发明人：VOJTOVICH VIKTOR EVGEN'EVICH;GORDEEV ALEKSANDR IVANOVICH;DUMANEVICH ANATOLIJ NIKOLAEVICH;KRJUKOV VITALIJ L'VOVICH

分类号：H01L29/861

主分类号：H01L29/861

摘要：FIELD: physics.SUBSTANCE: invention relates to semiconductor devices. A multi-epitaxial structure of a double-injection high-voltage hyper-fast recovery diode chip based on gallium and arsenic compounds comprises a heavily doped monocrystalline substrate of p-type conductivity, with differential concentration of acceptor and donor dopants of not more than 3·10cmand thickness of not more than 200 mcm, an epitaxial GaAs layer made thereon, having p-type conductivity with thickness of not more than 5.0 mcm and differential concentration of donor and acceptor dopants which varies from concentration in the substrate to values of not more thanan epitaxial GaAs i-layer with thickness of 5-100 mcm having p-n-junction type conductivity and a space-charge region, and an inner-lying multi-epitaxial metal junction area, and an epitaxial GaAs layer on a p-n junction epitaxial i-layer, having n-type conductivity with differential concentration of acceptor and donor dopants in the surface layer of not less than 1·10cmand thickness of not less than 0.1 mcm.EFFECT: invention prevents forward potential drop, increases forward biasing current and operating speed.2 cl, 3 dwg