PLASMA ETCHING METHOD, AND PLASMA ETCHING APPARATUS,申请号JP20130061361-传众专利搜索

PLASMA ETCHING METHOD, AND PLASMA ETCHING APPARATUS

申请公布号：JP2014187231(A)

申请号：JP20130061361

申请日期：2013.03.25

申请公布日期：2014.10.02

申请人：

TOKYO ELECTRON LTD;TOSHIBA CORP

发明人：MATSUYAMA SHOICHIRO;SHIMIZU AKITAKA;NOGAMI TATSU;ITO KIYOHITO;OIWA NORIHISA;YAHASHI KATSUNORI

分类号：H01L21/3065;H05H1/46

主分类号：H01L21/3065

摘要：<p>PROBLEM TO BE SOLVED: To provide a plasma etching method and a plasma etching apparatus which enable the suppression of occurrence of local biasing of an etching rate, and the suppression of occurrence of charge-up damage.SOLUTION: A plasma etching method is arranged so that a plasma etching apparatus is used for etching a silicon layer of a substrate to be processed. In the plasma etching method, the pressure inside a process chamber is 1.33 Pa or higher; and a first high frequency power having a first frequency, and a second high frequency power having a second frequency which is equal to or lower than 1 MHz, and lower than the first frequency are applied to a lower electrode.</p>