METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING DEVICE,申请号JP20140129561-传众专利搜索

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING DEVICE

申请公布号：JP2014187393(A)

申请号：JP20140129561

申请日期：2014.06.24

申请公布日期：2014.10.02

申请人：

HITACHI KOKUSAI ELECTRIC INC

发明人：SASAJIMA RYOTA;HIROSE YOSHIRO;OTA YOSUKE;AKAE HISANORI;YOKOZAWA KOJIRO

分类号：H01L21/316;C23C16/40;C23C16/42;C23C16/56;H01L21/31

主分类号：H01L21/316

摘要：<p>PROBLEM TO BE SOLVED: To improve the film quality of an oxide film.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming an oxide film of a prescribed film thickness on a substrate by alternately repeating a step of forming a prescribed element-containing layer on the substrate by supplying a material gas containing the prescribed element into a processing container and a step of changing the prescribed element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the processing container; and modifying the oxide film formed on the substrate by supplying an oxygen-containing gas and a hydrogen-containing gas into the processing container. The step of changing a prescribed element-containing layer to an oxide layer generates an oxidizing species containing atomic oxygen by reaction of an oxygen-containing gas and a hydrogen-containing gas under a pressure atmosphere less than a heated atmospheric pressure and changes the prescribed element-containing layer to an oxide layer. The step of modifying an oxide film generates an oxidizing species containing atomic oxygen by reaction of an oxygen-containing gas and a hydrogen-containing gas under a pressure atmosphere less than a heated atmospheric pressure and modifies the oxide film.</p>