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SEMICONDUCTOR STORAGE DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR STORAGE DEVICE
申请公布号：JP2014187191(A)
申请号：JP20130061112
申请日期：2013.03.22
申请公布日期：2014.10.02
发明人：TAKAMURA KAZUHIDE;KATSUMATA RYUTA;KITO MASARU;UOZUMI NOBUHIRO;ICHINOSE DAIGO;MATSUDA TORU
分类号：H01L27/115;H01L21/336;H01L21/8247;H01L29/788;H01L29/792
主分类号：H01L27/115
摘要：<p>PROBLEM TO BE SOLVED: To provide a semiconductor storage device manufacturing method and a semiconductor storage device, which enable appropriate and highly efficient processing on a laminate having a plurality of electrode films and a plurality of insulation films.SOLUTION: According to an embodiment, a semiconductor storage device manufacturing method comprises: a process of forming on a second stopper film, a laminate having a plurality of electrode films and a plurality of insulation films each provided between the plurality of electrode films; a process of forming in the laminate, slits which reach the second stopper film; a process of forming in the laminate, holes which pierces the laminate and the opening to reach the first stopper film; a process of removing the sacrificial film through the holes; a process of forming on sidewalls of the holes, memory films including charge storage films; and a process of forming channel bodies on sidewalls of the memory films. Each of the first stopper film and the second stopper film has etching resistance higher than that of each of the electrode film and the insulation film.</p>