PEELING METHOD, AND SEMICONDUCTOR DEVICE,申请号JP20140029721-传众专利搜索

PEELING METHOD, AND SEMICONDUCTOR DEVICE

申请公布号：JP2014187356(A)

申请号：JP20140029721

申请日期：2014.02.19

申请公布日期：2014.10.02

申请人：

SEMICONDUCTOR ENERGY LAB CO LTD

发明人：YASUMOTO SEIJI;SATO MASATAKA;EGUCHI SHINGO;SUZUKI KUNIHIKO

分类号：H01L27/12;H01L21/02;H01L21/336;H01L29/786;H01L51/50;H05B33/02;H05B33/10;H05B33/22

主分类号：H01L27/12

摘要：<p>PROBLEM TO BE SOLVED: To enhance detachability, or enhance the yield in the peeling process, or enhance manufacturing yield of a flexible device.SOLUTION: A peeling method includes a first step for forming a peeling layer containing tungsten on a support substrate, a second step for forming a peeled layer where a first layer containing silicon oxynitride and a second layer containing silicon nitride are laminated, in order, on the peeling layer, and an oxide layer containing a tungsten oxide between the peeling layer and the peeled layer, a third step for forming a compound containing tungsten and nitride in the oxide layer by heating treatment, and a fourth step for peeling the peeling layer and the peeled layer at the boundary of the oxide layer.</p>