DISPOSITIF SEMI-CONDUCTEUR SENSIBLE AUX GAZ

申请公布号：FR2951273(B1)

申请号：FR20100058090

申请日期：2010.10.06

申请公布日期：2014.07.04

申请人：

ROBERT BOSCH GMBH

发明人：KUNZ DENIS;WIDENMEYER MARKUS;MARTIN ALEXANDER

分类号：G01N27/414

主分类号：G01N27/414

摘要：A gas-sensitive semiconductor device having a semiconductive channel (10) which is delimited by a first (12) and a second (14) channel electrode, and having a gate electrode (16) which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel (10) occurs as a response to an action of a gas. The gate electrode (16) and/or a gate insulation layer (20) which insulates the gate electrode from the channel, and/or a gate stack layer (18) which may be provided between the gate electrode and the channel have/has two surface sections (22, 24) which differ in their sensitivity to gases.

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