Methods to Improve Leakage for ZrO2 Based High K MIM Capacitor,申请号US201213727898-传众专利搜索

Methods to Improve Leakage for ZrO2 Based High K MIM Capacitor

申请公布号：US2014187015(A1)

申请号：US201213727898

申请日期：2012.12.27

申请公布日期：2014.07.03

申请人：

INTERMOLECULAR, INC. ;ELPIDA MEMORY, INC.

发明人：Rui Xiangxin;Horikawa Mitsuhiro;Ode Hiroyuki;Ramani Karthik

分类号：H01L49/02

主分类号：H01L49/02

地址：San Jose CA US

摘要：A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer.

主权项：1. A method for forming a capacitor stack, the method comprising: forming a first electrode layer above a substrate; forming a first blocking layer on the first electrode layer, wherein the first blocking layer comprises a first metal oxide,wherein the first blocking layer has a thickness between 1 A and 15 A, andwherein the first metal oxide is less than 30% crystalline and has a resistivity greater than 0.01 ohm-cm; forming a dielectric layer above the first blocking layer, wherein the dielectric layer is substantially all crystalline; forming a second blocking layer on the dielectric layer, wherein the second blocking layer comprises a second metal oxide,wherein the second blocking layer has a thickness between 1 A and 15 A, andwherein the second metal oxide is less than 30% crystalline and has a resistivity greater than 0.01 ohm-cm; and forming a second electrode layer above the dielectric layer.