Annealing apparatus using two wavelengths of continuous wave laser radiation,申请号US201213485699-传众专利搜索

Annealing apparatus using two wavelengths of continuous wave laser radiation

申请公布号：US8765618(B2)

申请号：US201213485699

申请日期：2012.05.31

申请公布日期：2014.07.01

申请人：

Applied Materials, Inc.

发明人：Jennings Dean;Liang Haifan;Yam Mark;Parihar Vijay;Mayur Abhilash J.;Hunter Aaron Muir;Adams Bruce E.;Ranish Joseph M.

分类号：H01L21/268

主分类号：H01L21/268

代理机构：

Patterson & Sheridan, LLP

代理人：Patterson & Sheridan, LLP

地址：Santa Clara CA US

摘要：A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

主权项：1. A method of thermally treating a substrate comprising a semiconductor having a bandgap wavelength, comprising: directing an output of a first source of continuous-wave electromagnetic radiation having a first photon wavelength greater than the bandgap wavelength onto said substrate as a first beam having a first dimension along a first direction substantially smaller than a second dimension along a perpendicular second direction; directing an output of a second source of continuous-wave electromagnetic radiation having a second photon wavelength less than the bandgap wavelength onto said substrate as a second beam; scanning the first beam relative to the substrate along the first direction; and scanning the second beam relative to the substrate so that it surrounds the scanned first beam.