NITRIDE SEMICONDUCTOR ELEMENT,申请号JP20140024636-传众专利搜索

NITRIDE SEMICONDUCTOR ELEMENT

申请公布号：JP2014116636(A)

申请号：JP20140024636

申请日期：2014.02.12

申请公布日期：2014.06.26

申请人：

TOSHIBA CORP

发明人：SAITO WATARU;SAITO YASUNOBU;NODA TAKAO;FUJIMOTO HIDETOSHI;ONO TETSUYA

分类号：H01L29/41;H01L21/28;H01L21/329;H01L21/338;H01L29/06;H01L29/47;H01L29/778;H01L29/812;H01L29/861;H01L29/868;H01L29/87;H01L29/872

主分类号：H01L29/41

摘要：<p>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element having a voltage clamp function when an overvoltage is applied.SOLUTION: A nitride semiconductor element includes: a first layer composed of a first nitride semiconductor; a second layer provided on the first layer and composed of a second nitride semiconductor having a large band gap than the first nitride semiconductor; a first electrode electrically connected to the second layer and extending in a first direction; a plurality of second electrodes provided on the second layer so as to be spaced apart from the first electrode and provided in the first direction; and a floating electrode provided between the second electrodes on the second layer and having a portion further protruding than the second electrodes toward the first electrode.</p>