SEMICONDUCTOR ISOLATION STRUCTURE WITH AIR GAPS IN DEEP TRENCHES,申请号KR20120116136-传众专利搜索

SEMICONDUCTOR ISOLATION STRUCTURE WITH AIR GAPS IN DEEP TRENCHES

申请公布号：KR101410147(B1)

申请号：KR20120116136

申请日期：2012.10.18

申请公布日期：2014.06.19

分类号：H01L21/336;H01L21/762;H01L29/78

主分类号：H01L21/336

摘要：A device includes a semiconductor substrate, a contact plug over the semiconductor substrate, and an Inter-Layer Dielectric (ILD) layer over the semiconductor substrate, with the contact plug being disposed in the ILD. An air gap is sealed by a portion of the ILD and the semiconductor substrate. The air gap forms a full air gap ring encircling a portion of the semiconductor substrate.

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