Semiconductor Package Including Conductive Carrier Coupled Power Switches
申请公布号:US2014110776(A1)
申请号:US201314021661
申请日期:2013.09.09
申请公布日期:2014.04.24
发明人:CHO EUNG SAN;SAWLE ANDREW N.;PAVIER MARK;CUTLER DANIEL
分类号:H01L23/495
主分类号:H01L23/495
摘要:In one implementation, a semiconductor package including conductive carrier coupled power switches includes a first vertical FET in a first active die having a first source and a first gate on a source side of the first active die and a first drain on a drain side of the first active die. The semiconductor package also includes a second vertical FET in a second active die having a second source and a second gate on a source side of the second active die and a second drain on a drain side of the second active die. The semiconductor package includes a conductive carrier attached to the source side of the first active die and to the drain side of the second active die, the conductive carrier coupling the first source to the second drain.