,申请号JP20080270259-传众专利搜索

申请公布号：JP5465859(B2)

申请号：JP20080270259

申请日期：2008.10.20

申请公布日期：2014.04.09

分类号：H01L31/06

主分类号：H01L31/06

摘要：PROBLEM TO BE SOLVED: To provide a photovoltaic element having long-term, stable characteristics even in an optical absorption layer formed from a compound having a chalcopyrite type crystal structure. SOLUTION: An n-type light-transmitting buffer layer 140 pn-joined to the optical absorption layer 130 is stacked and formed on a p-type conductive optical absorption layer 130 by the compound in a chalcopyrite structure stacked over a pair of back electrode layers 120 on the surface of a glass substrate 110. A light-transmitting transparent electrode layer 160 is stacked onto the buffer layer 140, and is provided from one side of the optical absorption layer 130 and the buffer layer 140 to one of the back electrode layers 120. The transparent electrode layer 160 is formed as an amorphous thin film by a composition material having a grain size of not more than 0.001μm by surface observation of AFG with indium oxide and zinc oxide as principal components. The transparent electrode layer 160 is excellent in heat resistance and moisture resistance, prevents a change in optical characteristics, and has stable characteristics, thus obtaining long-term, stable energy conversion efficiency. COPYRIGHT: (C)2010,JPO&INPIT