Substrate structure and fabrication thereof, and light emitting diode devices fabricated from the same
申请公布号:US8674393(B2)
申请号:US20100975271
申请日期:2010.12.21
申请公布日期:2014.03.18
发明人:GUO YIH-DER;CHAO CHU-LI;FANG YEN-HSIANG;YEH RUEY-CHYN;LIN KUN-FONG
分类号:H01L33/00
主分类号:H01L33/00
摘要:A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.