High-mobility multiple-gate transistor with improved on-to-off current ratio,申请号US20090639653-传众专利搜索

High-mobility multiple-gate transistor with improved on-to-off current ratio

申请公布号：US8674341(B2)

申请号：US20090639653

申请日期：2009.12.16

申请公布日期：2014.03.18

申请人：

KO CHIH-HSIN;WANN CLEMENT HSINGJEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人：KO CHIH-HSIN;WANN CLEMENT HSINGJEN

分类号：H01L21/336

主分类号：H01L21/336

摘要：A multi-gate transistor includes a semiconductor fin over a substrate. The semiconductor fin includes a central fin formed of a first semiconductor material; and a semiconductor layer having a first portion and a second portion on opposite sidewalls of the central fin. The semiconductor layer includes a second semiconductor material different from the first semiconductor material. The multi-gate transistor further includes a gate electrode wrapping around sidewalls of the semiconductor fin; and a source region and a drain region on opposite ends of the semiconductor fin. Each of the central fin and the semiconductor layer extends from the source region to the drain region.