SEMICONDUCTOR DEVICE MANUFACTURING METHOD,申请号JP20120181183-传众专利搜索

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

申请公布号：JP2014038968(A)

申请号：JP20120181183

申请日期：2012.08.17

申请公布日期：2014.02.27

申请人：

PS4 LUXCO S A R L

发明人：SERA YUJI;ISHIKAWA SHIGEO

分类号：H01L21/8242;H01L21/314;H01L21/768;H01L27/108

主分类号：H01L21/8242

摘要：PROBLEM TO BE SOLVED: To inhibit undercut of an etching stopper film caused by wet etching.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a hard mask 200A by sequentially depositing a first mask film 22, an etching stopper film 23 composed of a carbon-containing silicon nitride film and a second mask film 24 above processed films 300; a process of patterning the hard mask 200A to form a hole pattern; and a process of transferring the hole pattern on the processed films 300. The patterning process of the hard mask 200A includes: a process of patterning the second mask film 24 and the etching stopper film 23 by using a first line-and-space pattern which is formed on a third mask film 25 and extends in a Y-direction and a second line-and-space pattern which is formed on a fourth mask film and extends in an X-direction; and a process of removing after removing the fourth mask film, the third mask film 25 remaining on the second mask film 24 by wet etching.