TRANSISTOR AND METHOD OF MANUFACTURING THE SAME,申请号KR20120080251-传众专利搜索

TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

申请公布号：KR20140013405(A)

申请号：KR20120080251

申请日期：2012.07.23

申请公布日期：2014.02.05

申请人：

SAMSUNG ELECTRONICS CO., LTD.

发明人：LEE, CHANG SEUNG;KIM, YONG SUNG;LEE, JOO HO;JUNG, YONG SEOK

分类号：H01L29/78;H01L21/336

主分类号：H01L29/78

摘要：<p>Disclosed are a transistor and a manufacturing method thereof. The disclosed transistor may include graphene and a material converted from the graphene. The transistor may have a channel layer including the graphene and a gate insulation layer including the material converted from the graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from the graphene. The patterned graphene region may have a nanoribbon or nanomesh structure. The gate of the transistor may include the graphene.</p>