METHOD OF FABRICATING A GATE,申请号US201313956482-传众专利搜索

METHOD OF FABRICATING A GATE

申请公布号：US2013316514(A1)

申请号：US201313956482

申请日期：2013.08.01

申请公布日期：2013.11.28

申请人：

SAMSUNG ELECTRONICS CO., LTD.

发明人：KIM JONG-PIL;JANG YOUNG-GOAN;KIM DONG-WON;CHO HAG-JU

分类号：H01L21/28;H01L21/76

主分类号：H01L21/28

摘要：A method of fabricating a gate includes sequentially forming an insulation layer and a conductive layer on substantially an entire surface of a substrate. The substrate has a device isolation layer therein and a top surface of the device isolation layer is higher than a top surface of the substrate. The method includes planarizing a top surface of the conductive layer and forming a gate electrode by patterning the insulation layer and the conductive layer.