METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE,申请号US201313891655-传众专利搜索

METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

申请公布号：US2013307037(A1)

申请号：US201313891655

申请日期：2013.05.10

申请公布日期：2013.11.21

申请人：

UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.

发明人：MASUOKA FUJIO;NAKAMURA HIROKI

分类号：H01L29/66;H01L29/78

主分类号：H01L29/66

摘要：A method for producing a semiconductor device includes a step of forming a first insulating film around a fin-shaped silicon layer and forming a pillar-shaped silicon layer in an upper portion of the fin-shaped silicon layer; a step of implanting an impurity into upper portions of the pillar-shaped silicon layer and fin-shaped silicon layer and a lower portion of the pillar-shaped silicon layer to form diffusion layers; and a step of forming a polysilicon gate electrode, a polysilicon gate line, and a polysilicon gate pad. The polysilicon gate electrode and the polysilicon gate pad have a larger width than the polysilicon gate line. After these steps follow a step of depositing an interlayer insulating film, exposing and etching the polysilicon gate electrode and the polysilicon gate line, and depositing a metal layer to form a metal gate electrode and a metal gate line, and a step of forming a contact.