MANUFACTURING METHOD OF GaN-BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

申请公布号：US2013307063(A1)

申请号：US201313950079

申请日期：2013.07.24

申请公布日期：2013.11.21

申请人：

TOHOKU UNIVERSITY;ADVANCED POWER DEVICE RESEARCH ASSOCIATION

发明人：KAMBAYASHI HIROSHI;TERAMOTO AKINOBU;OHMI TADAHIRO

分类号：H01L21/306;H01L21/02;H01L29/78

主分类号：H01L21/306

摘要：Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.

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