CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication,申请号US201213453215-传众专利搜索

CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication

申请公布号：US8569159(B2)

申请号：US201213453215

申请日期：2012.04.23

申请公布日期：2013.10.29

申请人：

CHENG KANGGUO;INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人：CHENG KANGGUO

分类号：H01L21/3205

主分类号：H01L21/3205

摘要：A semiconductor structure and a method for fabricating the semiconductor structure include a hybrid orientation substrate having a first active region having a first crystallographic orientation that is vertically separated from a second active region having a second crystallographic orientation different than the first crystallographic orientation. A first field effect device having a first gate electrode is located and formed within and upon the first active region and a second field effect device having a second gate electrode is located and formed within and upon the second active region. Upper surfaces of the first gate electrode and the second gate electrode are coplanar. The structure and method allow for avoidance of epitaxial defects generally encountered when using hybrid orientation technology substrates that include coplanar active regions.