DIODE,申请号WO2012JP60152-传众专利搜索

DIODE

申请公布号：WO2013153668(A1)

申请号：WO2012JP60152

申请日期：2012.04.13

申请公布日期：2013.10.17

申请人：

MITSUBISHI ELECTRIC CORPORATION;NISHII, AKITO;NAKAMURA, KATSUMI

发明人：NISHII, AKITO;NAKAMURA, KATSUMI

分类号：H01L29/861;H01L29/868

主分类号：H01L29/861

摘要：In the present invention, a p-type anode layer (2) is provided upon an n--type drift layer (1) in an active region. A p-type diffusion layer (3) is provided upon the n--type drift layer (1) in a termination region around the periphery of the active region. The outer periphery of the p-type anode layer (2) is covered with an oxide film (4). An anode electrode (5) is connected to the portion of the p-type anode layer (2) not covered by the oxide film (4). An n+-type cathode layer (7) is provided below the n--type drift layer (1). A cathode electrode (8) is connected to the n+-type cathode layer (7). The surface area of the portion of the p-type anode layer (2) covered by the oxide film (4) is 5-30% of the total surface area of the p-type anode layer (2).