METHOD FOR FORMING UNEVEN PATTERN,申请号KR20117027506-传众专利搜索

METHOD FOR FORMING UNEVEN PATTERN

申请公布号：KR101311621(B1)

申请号：KR20117027506

申请日期：2009.05.20

申请公布日期：2013.09.26

分类号：G11B5/84;H01L21/027;H01L21/3065

主分类号：G11B5/84

摘要：A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.