SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING THE SAME,申请号US201213814433-传众专利搜索

SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING THE SAME

申请公布号：US2013168701(A1)

申请号：US201213814433

申请日期：2012.09.12

申请公布日期：2013.07.04

申请人：

KIYOSAWA TSUTOMU;SAWADA KAZUYUKI;TAKAHASHI KUNIMASA;TOMITA YUKI;PANASONIC CORPORATION

发明人：KIYOSAWA TSUTOMU;SAWADA KAZUYUKI;TAKAHASHI KUNIMASA;TOMITA YUKI

分类号：H01L21/02;H01L29/16

主分类号：H01L21/02

摘要：A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a trench arranged in the SiC layer and having a bottom, a sidewall, and an upper corner region located between the sidewall and the upper surface of the SiC layer; a gate insulating film arranged on at least a part of the sidewall and on at least a part of the upper corner region of the trench and on at least a part of the upper surface of the SiC layer; and a gate electrode arranged on the gate insulating film. The upper corner region has a different surface from the upper surface of the SiC layer and from a surface that defines the sidewall. The gate electrode contacts with both of a first portion of the gate insulating film located on the upper corner region and a second portion of the gate insulating film located on the sidewall. The first portion of the gate insulating film is thicker than a third portion of the gate insulating film located on the upper surface of the SiC layer. And an end portion of the gate electrode is located on the upper corner region.