Semiconductor device having insulated gate field effect transistors and method of fabricating the same

申请公布号：US8476128(B2)

申请号：US20100652062

申请日期：2010.01.05

申请公布日期：2013.07.02

申请人：

ARAYASHIKI YUSUKE;KABUSHIKI KAISHA TOSHIBA

发明人：ARAYASHIKI YUSUKE

分类号：H01L21/8238

主分类号：H01L21/8238

摘要：A CMOSFET is composed of a P-channel MOSFET and an N-channel MOSFET formed on a silicon substrate. The P-channel MOSFET is formed a first gate insulating film, a first hafnium layer and a first gate electrode which are stacked on the silicon substrate. The N-channel MOSFET is formed a second gate insulating film, a second hafnium layer and a second gate electrode which are stacked on the silicon substrate. A surface density of the second hafnium layer is lower than a surface density of the first hafnium layer.

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