SEMICONDUCTOR PROCESSING SYSTEM WITH SOURCE FOR DECOUPLED ION AND RADICAL CONTROL,申请号WO2012US67737-传众专利搜索

SEMICONDUCTOR PROCESSING SYSTEM WITH SOURCE FOR DECOUPLED ION AND RADICAL CONTROL

申请公布号：WO2013090056(A1)

申请号：WO2012US67737

申请日期：2012.12.04

申请公布日期：2013.06.20

申请人：

LAM RESEARCH CORPORATION;KOSHIISHI, AKIRA;VENTZEK, PETER, L.G.;SHINAGAWA, JUN;HOLLAND, JOHN, PATRICK

发明人：KOSHIISHI, AKIRA;VENTZEK, PETER, L.G.;SHINAGAWA, JUN;HOLLAND, JOHN, PATRICK

分类号：H01B13/00

主分类号：H01B13/00

摘要：<p>A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular- shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.</p>