HIGH-VOLTAGE BIPOLAR-CMOS-DMOS INTEGRATED CIRCUIT DEVICES AND MODULAR METHODS OF FORMING THE SAME,申请号KR20137012928-传众专利搜索

HIGH-VOLTAGE BIPOLAR-CMOS-DMOS INTEGRATED CIRCUIT DEVICES AND MODULAR METHODS OF FORMING THE SAME

申请公布号：KR20130056920(A)

申请号：KR20137012928

申请日期：2007.05.30

申请公布日期：2013.05.30

申请人：

ADVANCED ANALOGIC TECHNOLOGIES, INC.

发明人：WILLIAMS RICHARD K.;DISNEY DONALD RAY;CHEN JUN WEI;CHAN WAI TIEN;RYU, HYUNG SIK

分类号：H01L21/336;H01L29/78

主分类号：H01L21/336

摘要：<p>All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ“as-implanted”dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.</p>