SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME,申请号JP20120195715-传众专利搜索

SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME

申请公布号：JP2013076163(A)

申请号：JP20120195715

申请日期：2012.09.06

申请公布日期：2013.04.25

申请人：

MITSUBISHI MATERIALS CORP

发明人：UMEMOTO KEITA;CHO SHUHIN

分类号：C23C14/34;C04B35/00

主分类号：C23C14/34

摘要：<P>PROBLEM TO BE SOLVED: To provide a sputtering target that has high electrical conductivity and is capable of forming a WOx film by DC sputtering, and to provide a method for manufacturing the same. <P>SOLUTION: The sputtering target is a sintered body of tungsten oxide having a structure comprising at least two phases including a WO<SB POS="POST">2</SB>phase and a W<SB POS="POST">18</SB>O<SB POS="POST">49</SB>phase, wherein the percentage of the WO<SB POS="POST">2</SB>phase in the structure is 5% or higher. The method for producing the sputtering target includes a step of preparing a tungsten oxide powder containing WO<SB POS="POST">2</SB>and at least one of W<SB POS="POST">18</SB>O<SB POS="POST">49</SB>and WO<SB POS="POST">3</SB>, and a step of sintering the tungsten oxide powder in a vacuum by hot pressing to produce the sintered body of tungsten oxide, wherein the content of WO<SB POS="POST">2</SB>in the tungsten oxide powder is 5-95 mol%. <P>COPYRIGHT: (C)2013,JPO&INPIT