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MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
申请公布号：JP2013058677(A)
申请号：JP20110197101
申请日期：2011.09.09
申请公布日期：2013.03.28
发明人：YOSHIE TORU;KAWAGUCHI HIROKO;SAITO TAKUO
分类号：H01L29/12;H01L21/336;H01L29/78
主分类号：H01L29/12
摘要：<P>PROBLEM TO BE SOLVED: To form a trench structure by a simple manufacturing process, in a semiconductor layer composed of SiC. <P>SOLUTION: In the manufacturing method of a semiconductor device having a structure where a trench is formed in a semiconductor layer composed of single crystal of silicon carbide (SiC), an amorphous layer is formed in the semiconductor layer, and the trench is formed by wet etching the amorphous layer. In order to form the amorphous layer, irradiation of light (laser light) is used in this manufacturing method. An absorption layer for absorbing light is formed and patterned on the semiconductor layer. The pattern of the amorphous layer (trench) in the plan view is defined by this absorption layer. <P>COPYRIGHT: (C)2013,JPO&INPIT
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