SEMICONDUCTOR POWER DEVICES INTEGRATED WITH A TRENCHED CLAMP DIODE

申请公布号：US2013075810(A1)

申请号：US201113246367

申请日期：2011.09.27

申请公布日期：2013.03.28

申请人：

HSIEH FU-YUAN;FORCE MOS TECHNOLOGY CO., LTD.

发明人：HSIEH FU-YUAN

分类号：H01L29/78

主分类号：H01L29/78

摘要：A semiconductor power device having shielded gate structure integrated with a trenched clamp diode formed in a semiconductor silicon layer, wherein the shielded gate structure comprises a shielded electrode formed by a first poly-silicon layer and a gate electrode formed by a second poly-silicon layer. The trenched clamp diode is formed by the first poly-silicon layer. A shielded gate mask used to define the shielded gate is also used to define the trenched clamp diode. Therefore, one poly-silicon layer and a mask for the trenched clamp diode are saved.

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