Semiconductor device having gate trenches and manufacturing method thereof,申请号US20090635309-传众专利搜索

Semiconductor device having gate trenches and manufacturing method thereof

申请公布号：US8390064(B2)

申请号：US20090635309

申请日期：2009.12.10

申请公布日期：2013.03.05

申请人：

MIKASA NORIAKI;ELPIDA MEMORY, INC.

发明人：MIKASA NORIAKI

分类号：H01L29/78

主分类号：H01L29/78

摘要：A semiconductor device includes a first gate trench, a second gate trench, and a dummy gate trench provided in an active region extending in an X direction; and a first gate electrode, a second gate electrode, and a dummy gate electrode extending in a Y direction crossing the active region, at least a part of which are buried in the first gate trench, the second gate trench, and the dummy gate trench, respectively. The dummy gate electrode arranged between second and third diffusion layers isolates and separates a transistor constituted by the first gate electrode and first and second diffusion layers provided on both sides of the first gate electrode, respectively, from a transistor constituted by the second gate electrode and third and fourth diffusion layers provided on both sides of the second gate electrode, respectively.