Luminescence device and method of manufacturing the same,申请号KR20120020457-传众专利搜索

Luminescence device and method of manufacturing the same

申请公布号：KR101221642(B1)

申请号：KR20120020457

申请日期：2012.02.28

申请公布日期：2013.02.05

分类号：H01L33/48

主分类号：H01L33/48

摘要：PURPOSE: A light emitting device and a manufacturing method thereof are provided to prevent the damage of a semiconductor layer due to pressurization by manufacturing a host substrate in outside and omitting a pressurized bonding process. CONSTITUTION: A semiconductor layer is formed on a growth substrate. The semiconductor layer comprises an n-type semiconductor layer(120), an active layer(130), and a p-type semiconductor layer(140). A buffer layer is formed in the lower side of the n-type semiconductor layer. A transparent electrode layer(150) is formed on the p-type semiconductor layer. A metal layer(155) for bonding is formed on the transparent electrode layer. A first metallic coating layer(180) is formed on the metal layer. A second metallic coating layer(190) is formed on the first metallic coating layer.