Reducing metal pits through optical proximity correction

申请公布号：US8341562(B1)

申请号：US201113188166

申请日期：2011.07.21

申请公布日期：2012.12.25

申请人：

HUANG JIUN-JIE;LIN CHI-YEN;WANG LING-SUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人：HUANG JIUN-JIE;LIN CHI-YEN;WANG LING-SUNG

分类号：G06F17/50

主分类号：G06F17/50

摘要：A method includes retrieving first layouts of an integrated circuit from a non-transitory computer-readable medium. The first layouts include a via pattern in a via layer, and a metal line pattern in a metal layer immediately over the via layer. The metal line pattern has an enclosure to the via pattern. The enclosure is increased to a second enclosure to generate second layouts of the integrated circuit.

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